Renesas Electronics Announces Development of SRAM Using Leading-Edge 16 nm FinFET for Automotive Information Systems
Business News
TOKYO--(BUSINESS WIRE)--Renesas Electronics announced the development of SRAM technology, using the 16 nm FinFET process,for automotive SoCs; the results of this research were presented at IEDM 2014, December 15-17, 2014.
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