MILPITAS, Calif. & LEIDEN, Netherlands--(BUSINESS WIRE)--IXYS Corporation (NASDAQ:IXYS), a manufacturer of power semiconductors and integrated circuits for energy efficiency, power management, and motor control applications, today announced the release of the new 3600V Reverse Conducting IGBTs (BiMOSFETs™). Featuring “free” intrinsic body diodes and current ratings from 45A to 125A, these devices present combined strengths of both MOSFETs and IGBTs. They are ideal for high speed, high voltage,
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