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IDT and EPC Collaborate to Integrate Gallium Nitride and Silicon for Faster, Higher Efficiency Semiconductor Devices

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SAN JOSE, Calif.--(BUSINESS WIRE)--Integrated Device Technology, Inc. (IDT®) (NASDAQ: IDTI) today announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency. Under their collaboration, the companies will explore integrating EPC’s eGaN® technology with leading IDT solutions. “GaN offers exciting opportunities to develop higher-performance, differentiated products f

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